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A new method based on thermal quadrupoles is presented to model the behavior of a single stage Si/SiGe micro-cooler in AC operating regime. The cold side temperature is calculated for different excitation frequencies, current magnitudes and device sizes. The sensitivity and precision of this method come from its analytical expressions, which are based on(More)
There are several classes of coherent phonons whose generation mechanisms are completely different: impulsive stimulated Raman scattering, Brillouin oscillations, and coherent longitudinal-acoustic-phonon Bragg reflection. All of these are investigated in Si/ SiGe superlattices using a picosecond ultrasonics technique at room temperature. Bragg reflection(More)
We have studied the electrically induced off-plane surface displacement on two microelectronic devices using Scanning Joule Expansion Microscopy (SJEM). We present the experimental method and surface displacement results. We show that they can be successfully compared with surface displacement images obtained using an optical interferometry method. We also(More)
Using a Femtosecond Transient Thermoreflectance ͑FTT͒ technique, we studied the thermomechanical properties of two Si/ SiGe superlattices. A theoretical model is presented which agrees well with the experimental results and allows us to determine the cross-plan thermal conductivity of the superlattices at room temperature. We also show that, from the(More)
This work analyses the applicability of silicon surface temperature phase measurements as a test observable when a device acting as a heat source dissipates a modulated power function. Specifically, this paper considers two different functions: the phase shift of the temperature waveform as a function of frequency and distance, and the slope of the(More)