Srinivasan Chakravarthi

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A comprehensive model is developed from ab-initio calculations to understand the effects of co-implanted fluorine (F) on boron (B) and phosphorus (P) under sub-amorphizing and amorphizing conditions. The depth of the amorphous-crystalline interface and the implant depth of F are the key parameters to understand the interactions. Under sub-amorphizing(More)
This paper reviews recent experiments that have shown that the probable mechanism for low voltage trap generation and dielectric breakdown is anode hydrogen release. Vibrational excitation of silicon-hydrogen bonds is the process that provides the most plausible explanation for the existence of a power law model for TDDB.
ACKNOWLEDGEMENTS In my professional journey, I have been fortunate in having the opportunity to spend the past 22 years in the employ of Texas Instruments Incorporated. In this environment, I have worked with, learned from, and been nurtured by many extraordinarily talented individuals. I have also benefited from interactions with researchers from other(More)
Boron exhibits anomalous diffusion during the initial phases of ion implant annealing. Boron transient enhanced diffusion is characterized by enhanced tail diffusion coupled with an electrically inactive immobile peak. The immobile peak is due to clustering of boron in the presence of excess interstitials which also enhance boron diffusion in the tail(More)
Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the(More)
A novel model is developed to explain the effect of the source/drain sidewall spacer process on boron drain extension formation. A diffusion model for hydrogen in the source/drain sidewall spacer is developed and combined with a model for boron diffusion in oxides. The model is first calibrated to hydrogen out-diffusion data from Nuclear Reaction Analysis(More)
A nitride spacer with an underlying deposited tetraethoxysilane oxide, that behaves as a convenient etch stop layer, is a popular choice for sidewall spacer in modern complementary metal–oxide– semiconductor process flows. In this work we have investigated the effect of the silicon nitride spacer process on the boron profile in silicon and the related dose(More)
AbsfrucfBoron Transient Enhanced Diffusion (TED) is characterized by enhanced tail diffusion coupled with an electrically inactive immobile peak associated with the clustering of boron in the presence of excess interstitials. A consistent model for process simulation has to account for the formation of a variety of agglomerates associated with the excess(More)
Simulation of ion implant annealing requires adequate models for a range of processes, including deactivation of dopants and transient enhanced diffusion. It is now well understood that extended defects ({311} defects, dislocation loops, BICs, arsenic precipitates, etc.) play a central role in all these processes. We have developed a fundamental model which(More)
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