Sri Purwiyanti

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In this work, we investigate the formation of mini-band energy in triple Si quantum wells-based resonance tunnelling diode focusing on the effect of applied bias on the band. The formation of mini-bands is obtained from the calculation of electron tunnelling probability through the wells. The calculation is done based on transfer matrix method. The(More)
Recently p-n junction characteristics in nanometer scale have been investigated in relation with photonics and electronics applications. In this paper, we report the experimental observation of negative differential conductance (NDC), the basic indication of tunneling, in nanoscale p-n junctions under forward bias condition. The NDC has been observed only(More)
We study nanosize-effect in lateral nanoscale p-n and p-i-n junction devices under light illumination. Current versus voltage (I-V) and current versus time (I-time) characteristics were investigated at low and at room temperature. At low temperature, only p-n junction devices show a photon sensitivity in I-V characteristics due to co-existence of(More)
This paper proposes a method for detecting moving objects on an underwater video. Video obtained using an underwater camera to capture the environmental conditions of the area. This research is the initial stage of the underwater surveillance system. Underwater surveillance system enables objects passing can be recognized shapes, types, and its behavior.(More)
We study ultrathin (2D) lateral Si Esaki tunneling diodes, and find that anomalous current peaks and humps are observed to be superimposed on the ordinary negative differential conductance (NDC). The remarkable enhancement of interband tunneling current is primarily ascribed to resonant tunneling via gap-states created by large potential fluctuation due to(More)
In this work, we study SOI nanoscale pn junctions and find that transport characteristics are strongly affected by states of individual dopants and by quantized energy states. For pn diodes with lower doping concentration, we find that individual dopant atoms work as electron traps, inducing RTS in the diode current. On the other hand, for highly-doped pn(More)
Recently, multiple quantum wells structure are often used in the laser and diode applications in order to increase their efficiency. In this structure, electron tunnelling phenomena from a quantum well to another well play a key role in electronic transport itself. Tunnelling is a quantum mechanical phenomenon where an electron is commonly represented by(More)
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