Soohwan Jang

Learn More
AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative temperature dependence of the critical voltage (V CRI) for irreversible device degradation to occur during bias-stressing. At elevated temperatures, devices exhibited similar gate leakage currents before and after biasing to V CRI , independent of both stress temperature and(More)
AlGaN/GaN High Electron Mobility Transistors (HEMTs) with various gate lengths have been step-stressed under both on-and off-state conditions. On-state, high power stress tests were performed on 0.17 lm gate length HEMTs and a single 5 lm spaced TLM pattern. Significant degradation of the submi-cron HEMTs as compared to the excellent stability of the TLM(More)
Self-powered human-interactive but invisible electronics have many applications in anti-theft and anti-fake systems for human society. In this work, for the first time, we demonstrate a transparent paper-based, self-powered, and human-interactive flexible system. The system is based on an electrostatic induction mechanism with no extra power system(More)
Small mass asymptotics of the motion of a particle moving in a force field (Smoluchowski-Kramers approximation) was first studied in Smoluchowski [13] and Kramers [9]. Freidlin summarized the results and considered various asymptotic problems related to it in 2004 [4]. Recently, there have been papers from various authors on small mass asymptotics [1,5,7](More)
  • 1