Sonnathi Neeleshwar

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The potential of exploiting the spin of the electron (in addition to its charge) in novel new electronic devices and the associated opportunities for new science has led to extensive search for viable magnetic semiconductors with room temperature ferromagnetism (RTFM). Some success for ferromagnetism has been reported in dilute magnetic semiconductors (DMS)(More)
This paper present modeling aspects for 4H-SiC Schottky diode using drift diffusion model. Drift diffusion model consists of the current continuity equations for electrons and holes, Poissonpsilas equation and the equations for electron and hole currents. Using this model physical surface trait, state of art of device has been extracted to understand the(More)
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