Songyan Chen

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High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si 0.77 Ge 0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 Â 10 5 cm À2 was obtained. The influence of low temperature Ge(More)
  • Guangyang Lin, Ningli Chen, Lu Zhang, Zhiwei Huang, Wei Huang, Jianyuan Wang +3 others
  • 2016
Direct band electroluminescence (EL) from tensile-strained Si 0.13 Ge 0.87 /Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm(More)
OBJECTIVE To investigate the efficacy and safety of the treatment of the newly diagnosed multiple myeloma (MM) patients with the therapy of subcutaneous (subQ) administration of bortezomib and dexamethasone plus thalidomide (VTD) regimen. METHODS A total of 60 newly diagnosed MM patients were analyzed. 30 patients received improved VTD regimen (improved(More)
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