Solon Despotopoulos

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In this paper, we describe a simple method to extract the average drift mobility and the apparent sheet electron density versus the applied gate voltage and the vertical effective electric field in strained-Si–SiGe buried-channel depletion-mode metal–oxide semiconductor field-effect transistors (n-MOSFETs). For this, we adapted an established technique used(More)
A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can be exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results were(More)
The recently published small-signal KAIST model is used successfully to fit the measured RF characteristics of a novel SiGe n-HMODFET device operating at micropower levels and extracted small-signal model parameters for this device under micropower operation are presented here for the first time. This model is then used to predict the performance of a(More)
A micropower-relevant model is extracted from the DC characteristics of an n-type buried channel Si/SiGe HMODFET (Hetero-junction Modulation Doped FET). This model is then used to design a novel monolithic SiGe single-stage class-A power amplifier for micropower operation (sub 500μW). The amplifier is fabricated and measured data of the power-gain versus(More)
1 SiGe HMOSFET monolithic inverting current mirror K. Michelakis *, S. Despotopoulos, C. Papavassiliou, A. Vilches, K. Fobelets, C. Toumazou a Institute of Biomedical Engineering Imperial College London South Kensington Campus, London SW7 2AZ United Kingdom Circuits and Systems Department of Electrical and Electronic Engineering Imperial College London(More)
Silicon-Germanium Heterojunction Metal-Oxide-Semiconductor Field-EffectTransistors (SiGe HMOSFETs) have been successfully fabricated on Si substrate. The semiconductor heterostructure, which was grown by gas-source molecular beam epitaxy (GS-MBE), was initiated by the deposition of a Si0.7Ge0.3 “virtual substrate”. The n-type transistors were fabricated(More)
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