Solon Despotopoulos

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A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can be exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results were(More)
In this paper, we describe a simple method to extract the average drift mobility and the apparent sheet electron density versus the applied gate voltage and the vertical effective electric field in strained-Si–SiGe buried-channel depletion-mode metal–oxide semiconductor field-effect transistors (n-MOSFETs). For this, we adapted an established technique used(More)
Silicon-Germanium Heterojunction Metal-Oxide-Semiconductor Field-Effect-Transistors (SiGe HMOSFETs) have been successfully fabricated on Si substrate. The semiconductor heterostructure, which was grown by gas-source molecular beam epitaxy (GS-MBE), was initiated by the deposition of a Si 0.7 Ge 0.3 " virtual substrate ". The n-type transistors were(More)
The authors present the first to their knowledge monolithic inverting current mirror fabricated on heterostructure Si/SiGe technology, using buried silicon channel depletion-mode MOSFET transistors. Characterisation results both at DC and at high frequencies prove that the technology is viable, with the circuit exhibiting remarkably high linearity while(More)
—The recently published small-signal KAIST model is used successfully to fit the measured RF characteristics of a novel SiGe n-HMODFET device operating at micropower levels and extracted small-signal model parameters for this device under micropower operation are presented here for the first time. This model is then used to predict the performance of a(More)
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