Slava V . Rotkin

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Single-walled carbon nanotubes (SWNTs) have many exceptional electronic properties. Realizing the full potential of SWNTs in realistic electronic systems requires a scalable approach to device and circuit integration. We report the use of dense, perfectly aligned arrays of long, perfectly linear SWNTs as an effective thin-film semiconductor suitable for(More)
The unique electronic properties of single-walled carbon nanotubes (SWNTs) make them promising candidates for next generation electronics, particularly in systems that demand high frequency (e.g., radio frequency, RF) operation. Transistors that incorporate perfectly aligned, parallel arrays of SWNTs avoid the practical limitations of devices that use(More)
Excess heat generated in integrated circuits is one of the major problems of modern electronics. Surface phonon-polariton scattering is shown here to be the dominant mechanism for hot charge carrier energy dissipation in a nanotube device fabricated on a polar substrate, such as SiO(2). By use of microscopic quantum models, the Joule losses were calculated(More)
A unified approach to the analysis of the mechanisms that lead to the edge reconstruction of graphite and growth of a variety of non-planar graphitic structures, such as nanotubes, is suggested. Transmission electron microscopy (TEM) shows that nano-arches are formed on the edge planes of natural and synthetic graphite, as well as graphite polyhedral(More)
The electronic properties of carbon nanotubes (NTs) in a uniform transverse field are investigated within a single orbital tight-binding (TB) model. For doped nanotubes, the dielectric function is found to depend not only on symmetry of the tube, but also on radius and Fermi level position. Band gap opening/closing is predicted for zigzag tubes, while it is(More)
The physics of operation of nanotube NEMS devices is reviewed. Special attention is paid to non-classical effects, rarely described in MEMS analysis, such as van der Waals/Casimir interactions, quantum effects in electrostatics, atomistic parameterization of elasticity. As an example of a breakdown of a classical MEMS theory, the NEMS scaling limitation is(More)
The electronic structure and dielectric screening of finite-length armchair carbon nanotubes are studied in view of their technical applications. For this purpose, a self-consistent tight-binding method, which captures the periodic oscillation pattern of the finite band gap as a function of tube length, is applied. We find the parallel screening constant E|(More)
Recent studies and device demonstrations indicate that horizontally aligned arrays of linearly configured single-walled carbon nanotubes (SWNTs) can serve as an effective thin film semiconductor material, suitable for scalable use in high-performance transistors. This paper presents the results of systematic investigations of the dependence of device(More)
Carbon nanotubes (CNTs) have large intrinsic carrier mobility due to weak acoustic phonon scattering. However, unlike two-dimensional metal-oxide-semiconductor field effect transistors (MOSFETs), substrate surface polar phonon (SPP) scattering has a dramatic effect on the CNTFET mobility, due to the reduced vertical dimensions of the latter. We find that(More)