Learn More
Single-walled carbon nanotubes (SWNTs) have many exceptional electronic properties. Realizing the full potential of SWNTs in realistic electronic systems requires a scalable approach to device and circuit integration. We report the use of dense, perfectly aligned arrays of long, perfectly linear SWNTs as an effective thin-film semiconductor suitable for(More)
The electrostatic coupling between singled-walled carbon nanotube ͑SWCNT͒ networks/arrays and planar gate electrodes in thin-film transistors ͑TFTs͒ is analyzed both in the quantum limit with an analytical model and in the classical limit with finite-element modeling. The computed capacitance depends on both the thickness of the gate dielectric and the(More)
Short single-walled carbon nanotubes (SWNTs) have been proposed as good candidates for artificial nano-scale channels due to their small size and stable structure. Unlike many insulating biological channels in nature, the nanotubes respond to external charges and electric potentials effectively due their delocalized /spl pi/-electrons. We study the(More)
The unique electronic properties of single-walled carbon nanotubes (SWNTs) make them promising candidates for next generation electronics, particularly in systems that demand high frequency (e.g., radio frequency, RF) operation. Transistors that incorporate perfectly aligned, parallel arrays of SWNTs avoid the practical limitations of devices that use(More)
Excess heat generated in integrated circuits is one of the major problems of modern electronics. Surface phonon-polariton scattering is shown here to be the dominant mechanism for hot charge carrier energy dissipation in a nanotube device fabricated on a polar substrate, such as SiO(2). By use of microscopic quantum models, the Joule losses were calculated(More)
Recent studies and device demonstrations indicate that horizontally aligned arrays of linearly configured single-walled carbon nanotubes (SWNTs) can serve as an effective thin film semiconductor material, suitable for scalable use in high-performance transistors. This paper presents the results of systematic investigations of the dependence of device(More)
Carbon nanotubes (CNTs) have large intrinsic carrier mobility due to weak acoustic phonon scattering. However, unlike two-dimensional metal-oxide-semiconductor field effect transistors (MOSFETs), substrate surface polar phonon (SPP) scattering has a dramatic effect on the CNTFET mobility, due to the reduced vertical dimensions of the latter. We find that(More)
We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube and array devices. We show that for as-grown array diodes, the rectification ratio, defined by the(More)