Slade J. Jokela

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Zinc oxide ~ZnO! is a wide-band gap semiconductor that has attracted tremendous interest for optical, electronic, and mechanical applications. First-principles calculations by @C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 ~2000!# have predicted that hydrogen impurities in ZnO are shallow donors. In order to determine the microscopic structure of hydrogen(More)
Zinc oxide (ZnO) is a strong candidate for energy-efficient white lighting and numerous optoelectronic applications. Hydrogen impurities play important roles, good and bad, in the pursuit of reliable p-type doping of ZnO. In pervious work, we identified hydrogen donors with the back-bonded or ‘‘anti-bonding’’ orientation, with an angle of 1111 to the(More)
The secondary electron emission (SEE) yields were calculated for various materials and a good comparison has been obtained with the experimental data for gold measured at ANL. The calculation method uses Monte Carlo simulation, empirical theories, and close comparison to experiment, in order to parameterize the SEE yields of highly emissive materials for(More)
Materials with persistent photoconductivity (PPC) experience an increase in conductivity upon exposure to light that persists after the light is turned off. Although researchers have shown that this phenomenon could be exploited for novel memory storage devices, low temperatures (below 180 K) were required. In the present work, two-point resistance(More)
Zinc oxide (ZnO) is a wide band gap II–VI semiconductor with optical, electronic, and mechanical applications. Nitrogen is a promising acceptor dopant. Nitrogen–hydrogen (N–H) complexes were introduced into ZnO during chemical vapor transport (CVT) growth, using ammonia as a doping source. The N–H bond-stretching mode gives rise to an infrared (IR)(More)
Zinc oxide (ZnO) has shown great promise as a wide-bandgap semiconductor with a range of optical, electronic, and mechanical applications. The presence of compensating donors, however, is a major roadblock to achieving p-type conductivity. Recent first-principles calculations and experimental studies have shown that hydrogen acts as a shallow donor in ZnO,(More)
Zinc oxide (ZnO) has emerged as a leading material for microand optoelectronic applications. Although the fabrication of ZnO, from nanocrystals to bulk single crystals, is well established, a major roadblock for fabricating optoelectronic devices is the lack of reliable p-type doping. The presence of compensating donors inhibits the growth of p-type ZnO. In(More)
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