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Approaching new metrics for wafer flatness: an investigation of the lithographic consequences of wafer non-flatness
Flatness of the incoming silicon wafer is one major contributor to the ultimate focusing limitation of modern exposure tools. Exposure tools are designed to chuck wafers without creating non-flatnessExpand
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Performance of a high-productivity 300-mm dual-stage 193-nm 0.75-NA TWINSCAN AT:1100B system for 100-nm applications
To realize high productivity at the 100 nm node, ASML developed the TWINSCANTM AT:1100B. This dual stage 193 nm lithography system combines high throughput TWINSCANTM technology for 300 nm wafers,Expand
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The performance advantages of a dual-stage system
To realize improved process control at high productivity, the TWINSCAN platform has been developed. This dual stage lithography system combines high throughput TWINSCAN technology with excellentExpand
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Performance of a high productivity 300 mm dual stage 193 nm 0.75 NA TWINSCAN AT:1100B system for 100 nm applications
To realize high productivity at the 100-nm node, ASML developed the TWINSCAN TM AT:1100B. This dual-stage 193-nm lithography system combines high throughput TWINSCAN TM technology for 300-mm wafers,Expand
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