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- Publications
- Influence
Approaching new metrics for wafer flatness: an investigation of the lithographic consequences of wafer non-flatness
- J. Valley, Noel Poduje, +10 authors Les Stanton
- Engineering
- SPIE Advanced Lithography
- 24 May 2004
Flatness of the incoming silicon wafer is one major contributor to the ultimate focusing limitation of modern exposure tools. Exposure tools are designed to chuck wafers without creating non-flatness… Expand
Performance of a high-productivity 300-mm dual-stage 193-nm 0.75-NA TWINSCAN AT:1100B system for 100-nm applications
- Rian Rubingh, Y. van Dommelen, +9 authors Christian Hembd-Soellner
- Materials Science, Engineering
- SPIE Advanced Lithography
- 15 July 2002
To realize high productivity at the 100 nm node, ASML developed the TWINSCANTM AT:1100B. This dual stage 193 nm lithography system combines high throughput TWINSCANTM technology for 300 nm wafers,… Expand
The performance advantages of a dual-stage system
- M. Boonman, C. Vin, +4 authors A.W.E. Minnaert
- Engineering
- SPIE Advanced Lithography
- 28 May 2004
To realize improved process control at high productivity, the TWINSCAN platform has been developed. This dual stage lithography system combines high throughput TWINSCAN technology with excellent… Expand
Performance of a high productivity 300 mm dual stage 193 nm 0.75 NA TWINSCAN AT:1100B system for 100 nm applications
- Rian Rubingh, Youri van Dommelen, +9 authors Christian Hembd-Soellner
- Materials Science
- 2003
To realize high productivity at the 100-nm node, ASML developed the TWINSCAN TM AT:1100B. This dual-stage 193-nm lithography system combines high throughput TWINSCAN TM technology for 300-mm wafers,… Expand