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The impact of silicon technology scaling trends and the associated technological innovations on RF CMOS device characteristics are examined. The application of novel strained silicon and high-k/metal gate technologies not only benefits digital systems , but significantly improves RF performance. The peak cutoff frequency (f T) doubles from 209 GHz in the 90(More)
As scaling down MOSFET devices degrade device performance in term of leakage current and short channel effects. To overcome the problem a newer device Silicon-on-Insulator (SOI) MOSFET has been introduced. The Fully Depleted (FD) SOI MOSFETs also suffer from short channel effects (SCE) in the sub 65 nm regime due to reduction in threshold voltage. Several
As tri-gate transistor technologies continue to scale to smaller dimensions, a variety of aging mechanisms become important to include in models to accurately predict end-of-life transistor performance. Traditional aging effects such as BTI and hot carrier continue to play a role. However, modeling these mechanisms becomes more complicated with the addition(More)
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