Siqiang Fan

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This paper presents the design of a low-power single-full-band (3.1-10.6 GHz) noncarrier impulse-radio ultra-wideband (UWB) transmitter (TX) implemented in a commercial 0.18-μm CMOS technology. This UWB TX features fifth-order Gaussian derivative pulse shaping, integrated binary phase-shift keying modulation and 2.5-kV whole-chip electrostatic(More)
In this paper, a single-chip pulse-based, noncarrier, full-band, low power ultra wideband (UWB) transceiver system-on-a-chip (SoC) for high data rate wireless video/audio/multimedia streaming applications is presented. This UWB SoC features a single full-band (7.5GHz bandwidth from 3.1GHz to 10.6GHz), pulse-based non-carrier architecture to achieve high(More)
This paper reports a new nanocrystal quantum-dot (NC-QD)-based tunable on-chip electrostatic discharge (ESD) protection mechanism and structures. Experiments validated the programmable ESD protection concept. Prototype structures achieved an adjustable ESD triggering voltage range of 2.5 V, very fast response to ESD transients of rising time tr ∼ 100 ps and(More)
This paper reports a new nano crystal quantum dots (NC-QD) tunable on-chip electrostatic discharge (ESD) protection mechanism and structures. Experiments validated the programmable ESD protection concept. Prototype structures achieved an adjustable ESD triggering voltage range of 2.5V, very fast ESD response of ~100pS, ESD protection density of(More)
This paper reviews and discusses the design of a low-power single-full-band (3.1–10.6 GHz) noncarrier impulse-radio ultra wideband (UWB) transmitter featuring 5th-order Gaussian derivative pulse shaping, integrated BPSK modulation, and 2.5 kV whole-chip ESD (electrostatic discharge) protection. The UWB transmitter design has been implemented in a commercial(More)
This paper reports design of a novel low-parasitic ultra-low-triggering voltage dual-directional LTdSCR ESD protection structure in foundry CMOS. It features programmable low triggering voltage of 4.7∼6V, low discharging resistance of ∼0.77Ω, low leakage of ∼0.1nA, extremely low parasitic capacitance of ∼10fF and ultra(More)