Silvia Lenci

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In this work we report on the two most common failure modes for AlGaN/GaN-based HEMTs: the gate leakage increase and the output current drop. First, by performing step-stress experiments in function of the step-time (tSTEP) we show that the critical voltage for the increase of gate leakage current depends on the tSTEP and is not associated with a permanent(More)
In this work we report on the fabrication and characterization of GaN-on-Si HEMTs for 50V RF applications at 2 GHz. Good wafer uniformity over the main DC parameters and leakage current levels below 10 μA/mm up to 100V were obtained on 4-inch Si substrate. Moreover, thanks to low RF loss at the Si substrate, a PAE close to 50% was measured on 1 mm(More)
Dynamic characterization (Pulsed I-V) on Au-free AlGaN/GaN Schottky Barrier Diodes (SBDs) has been performed to evaluate the impact of negative quiescent bias on the forward characteristics. Results show an increase of on-resistance when more negative quiescent biases are applied, and a sudden current collapse phenomenon when the quiescent bias exceeds -175(More)
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