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Rise-time distribution spectra of a polycrystalline chemical vapor deposited diamond detector were directly measured from alpha-particle induced pulse shapes over a temperature range of 240– 280 K. Pulses due to hole-dominated charge transport showed a strong delayed component due to thermal detrapping of charge from a shallow level, with a mean rise time(More)
In this letter, pronounced hysteresis loops were observed in single-walled carbon nanotube-based field-effect transistors ͑CNTFETs͒. The shift in threshold voltage was found to increase with increasing gate voltage sweep ranges. A significant enhancement in the charge storage stability over 14 days was obtained at room temperature after a two-stage hydrogen(More)
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