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Journals and Conferences
We demonstrate scalable Si nanowire photodetectors that function as phototransistors. Etched planar and vertical Si nanowire photodetectors have been fabricated and characterized, showing high (>35,000) internal gain under UV illumination.
A single photon avalanche detector featuring a transient carrier buffer layer to form an energy barrier that tentatively stops avalanche-generated carriers, demonstrates self-quenching and self-recovering capabilities. The escape rate of those stopped avalanche carriers from the barrier determines the self-recovery time and thus the count rate of the single… (More)
InGaAs single photon avalanche detectors have previously been fabricated with a negative-feedback mechanism, which allows for free-running Geiger-mode operation and improves the signal noise. To reduce the dark count and improve the detection efficiency, zinc diffusion is necessary to define the p-i-n junction and separate the high-field region from any… (More)