Siegfried Selberherr

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SIMON is a single-electron tunnel device and circuit simulator that is based on a Monte Carlo method. It allows transient and stationary simulation of arbitrary circuits consisting of tunnel junctions, capacitors, and voltage sources of three kinds: constant, piecewise linearly time dependent, and voltage controlled. Cotunneling can be simulated either with(More)
Discretization and iterative solution of the semiconductor equations in a three-dimensional rectangular region lead to very large sparse linear systems. Nevertheless, design engineers and scientists of device physics need reliable results in short time in order to draw the best advantage out of computer simulation when designing new technologies and(More)
We present a monolithic low-power, low-noise analog front-end electroencephalogram acquisition system. It draws only 500 A from a standard 9-V battery, making it suitable for use in portable systems. Although fabricated in a standard CMOS technology, by using current feedback techniques it achieves a common mode rejection ratio of 100 dB while the total(More)
Simulations and measurements of submicron pseudomorphic high electron mobility transistors (HEMT’s) are presented. For the simulations the generic device simulator MINIMOS-NT is used which is capable of dealing with complex device geometries as well as with several physical models represented by certain sets of partial differential equations. A description(More)
Double-gate transistors are considered as an attractive option to improve the performance of logic devices and overcome some of the difficulties encountered in further downscaling of bulk MOS field-effect transistors into the decananometer regime [1]. When the channel length is reduced below approximately 25nm, quantum effects such as direct source-to-drain(More)
M. Nedjalkov,1,2 H. Kosina,2 S. Selberherr,2 C. Ringhofer,3 and D. K. Ferry1 1Department of Electrical Engineering, Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-1804, USA 2Institute for Microlectronics, TU-Vienna, Gusshausstrasse 27-29, E360 A-1040, Vienna, Austria 3Department of Mathematics, Arizona State(More)
A theoretical analysis of the Monte Carlo method for steady-state semiconductor device simulation, also known as the single-particle Monte Carlo method, is presented. At the outset of the formal treatment is the stationary Boltzmann equation supplemented by boundary conditions, which is transformed into an integral equation. The conjugate equation has been(More)
A compact model for early electromigration failures in copper dual-damascene interconnects is proposed. The model is based on the combination of a complete void nucleation model together with a simple mechanism of slit void growth under the via. It is demonstrated that the early electromigration lifetime is well described by a simple analytical expression,(More)
For the development of next-generation AlGaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required. Our device simulator Minimos-NT was calibrated against experimental data for this purpose. Subsequently, AC and DC simulations for both scaled devices from the same generation and new(More)
A stochastic model of the resistive switching mechanism in bipolar metal-oxide-based resistive random access memory RRAM is presented. The distribution of electron occupation probabilities obtained is in good agreement with previous work. In particular, it is shown that a low occupation region is formed near the cathode. Our simulations of the temperature(More)