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—SIMON is a single-electron tunnel device and circuit simulator that is based on a Monte Carlo method. It allows transient and stationary simulation of arbitrary circuits consisting of tunnel junctions, capacitors, and voltage sources of three kinds: constant, piecewise linearly time dependent, and voltage controlled. Cotunneling can be simulated either(More)
A theoretical analysis of the Monte Carlo method for steady-state semiconductor device simulation, also known as the single-particle Monte Carlo method, is presented. At the outset of the formal treatment is the stationary Boltzmann equation supplemented by boundary conditions, which is transformed into an integral equation. The conjugate equation has been(More)
A multipurpose single-electron device and circuit simulator is presented, with which it is possible to simulate a wide variety of single-electron devices. the simulator features among others the incorporation of co-tunneling by two different simulation methods, a graphical user interface and a graphical circuit editor. A new algorithm for the simulation of(More)
Discretization and iterative solution of the semiconductor equations in a three-dimensional rectangular region lead to very large sparse linear systems. Nevertheless, design engineers and scientists of device physics need reliable results in short time in order to draw the best advantage out of computer simulation when designing new technologies and(More)
—We present a monolithic low-power, low-noise analog front-end electroencephalogram acquisition system. It draws only 500 A from a standard 9-V battery, making it suitable for use in portable systems. Although fabricated in a standard CMOS technology, by using current feedback techniques it achieves a common mode rejection ratio of 100 dB while the total(More)
—There have been numerous papers and discussions about the lives and deaths of Moore's Law, all of them dealing with several technological questions. In this paper, we consider economic limitations to the exponential growth of the number of components per chip. As the presented growth model shows, economics constitute indeed a potential slowdown mechanism.(More)
We introduce a meshing method which uses an advancing front Delaunay algorithm. The presented Delaunay technique avoids the need for a temporary tetrahedralization of the convex hull and a later following segmentation step which is typical for commonly used methods. The algorithm is suitable for local regridding applications. This is an important issue for(More)
To accurately simulate modern semiconductor process steps, a simulation tool must include a variety of physical models and numerical methods. Increasingly complex physical formulations are required to account for effects that were not important in simulating previous generations of technology. Thus flexibility in definition of models as well as numerical(More)
This paper presents results of a new numerical treatment of 3D MOSFET simulation with nonplanar interfaces. The simulations have been carried out by MINIMOS 5 our fully three-dimensional simulation program. Three-dimensional effects like threshold shift for small channel devices , channel narrowing and the enhanced conductivity at the channel edge have been(More)