Siegfried Selberherr

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—SIMON is a single-electron tunnel device and circuit simulator that is based on a Monte Carlo method. It allows transient and stationary simulation of arbitrary circuits consisting of tunnel junctions, capacitors, and voltage sources of three kinds: constant, piecewise linearly time dependent, and voltage controlled. Cotunneling can be simulated either(More)
Discretization and iterative solution of the semiconductor equations in a three-dimensional rectangular region lead to very large sparse linear systems. Nevertheless, design engineers and scientists of device physics need reliable results in short time in order to draw the best advantage out of computer simulation when designing new technologies and(More)
A theoretical analysis of the Monte Carlo method for steady-state semiconductor device simulation, also known as the single-particle Monte Carlo method, is presented. At the outset of the formal treatment is the stationary Boltzmann equation supplemented by boundary conditions, which is transformed into an integral equation. The conjugate equation has been(More)
We introduce a meshing method which uses an advancing front Delaunay algorithm. The presented Delaunay technique avoids the need for a temporary tetrahedralization of the convex hull and a later following segmentation step which is typical for commonly used methods. The algorithm is suitable for local regridding applications. This is an important issue for(More)
—There have been numerous papers and discussions about the lives and deaths of Moore's Law, all of them dealing with several technological questions. In this paper, we consider economic limitations to the exponential growth of the number of components per chip. As the presented growth model shows, economics constitute indeed a potential slowdown mechanism.(More)
In Monte Carlo (MC) simulations of semiconductor devices it is necessary to enhance the statistics in sparsely populated regions of interest. In this work the Monte Carlo method for stationary carrier transport, known as the Single-Particle MC method, is considered. It gives a solution to the stationary boundary value problem defined by the semi-classical(More)
This paper presents results of a new numerical treatment of 3D MOSFET simulation with nonplanar interfaces. The simulations have been carried out by MINIMOS 5 our fully three-dimensional simulation program. Three-dimensional effects like threshold shift for small channel devices , channel narrowing and the enhanced conductivity at the channel edge have been(More)
The implementation of the Profile Interchange Format (PIF) for Technology CAD (TCAD) purposes is demonstrated. An application program interface for use with process and device simulation tools coded in FORTRAN, C and LISP is presented, capable of performing convenient , fast and flexible access to an extendable binary data format which fulfills todays and(More)