Siddarth A. Krishnan

Learn More
We investigate current collapse in GaN MIS-HEMTs for >600 V operation. Extreme trapping leading to total current collapse has been observed after OFF-state stress at high voltage. We attribute this to high-field tunneling-induced electron trapping (" Zener trapping ") inside the AlGaN barrier or the GaN channel layers. The trapping takes place in a narrow(More)
— Gate resistance, middle of line resistance, and back end of line resistance in modern metal-gate CMOS increase drastically as the dimensions of the gates, interconnects and vias scale down close to or below the bulk electron mean free paths (MFPs) of the metal materials. These resistances, especially the gate resistance, impose more and more significant(More)
  • 1