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After a decade of intensive research on two-dimensional (2D) materials inspired by the discovery of graphene, the field of 2D electronics has reached a stage with booming materials and device architectures. However, the efficient integration of 2D functional layers with three-dimensional (3D) systems remains a significant challenge, limiting device(More)
: Novel fluffy Fe@α-Fe2O3 core-shell nanowires have been synthesized using the chemical reaction of ferrous sulfate and sodium borohydride, as well as the post-annealing process in air. The coercivity of the as-synthesized nanowires is above 684 Oe in the temperature range of 5 to 300 K, which is significantly higher than that of the bulk Fe (approximately(More)
Two methods for separating the constituent atoms of molecular ions within atom probe tomography reconstructions are presented. The Gaussian Separation Method efficiently deconvolutes molecular ions containing two constituent atoms and is tested on simulated data before being applied to an experimental HSLA steel dataset containing NbN. The Delaunay(More)
We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced inter-mixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to(More)
Semiconductor nanowires have been intensively explored for applications in electronics, photonics, energy conversion and storage. A fundamental and quantitative understanding of growth-structure-property relationships is central to applications where nanowires exhibit clear advantages. Atom Probe Tomography (APT) is able to provide 3 dimensional(More)
High-performance photodetectors operating over a broad wavelength range from ultraviolet, visible, to infrared are of scientific and technological importance for a wide range of applications. Here, a photodetector based on van der Waals heterostructures of graphene and its fluorine-functionalized derivative is presented. It consistently shows broadband(More)
III-V ternary InGaAs nanowires have great potential for electronic and optoelectronic device applications; however, the 3D structure and chemistry at the atomic-scale inside the nanowires remain unclear, which hinders tailoring the nanowires for specific applications. Here, atom probe tomography is used in conjunction with a first-principles simulation to(More)
Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimensional elemental mapping of pristine semiconductor nanowires on growth substrates by using atom probe(More)
Atom probe tomography (APT) is capable of simultaneously revealing the chemical identities and three dimensional positions of individual atoms within a needle-shaped specimen, but suffers from a limited field-of-view (FOV), i.e., only the core of the specimen is effectively detected. Therefore, the capacity to analyze the full tip is crucial and much(More)
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