Shyh-Chi Wu

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In this study, the SiGe epilayers were created on silicon substrate by using ultra-high vacuum chemical vapor deposition (UHV/CVD) and followed by annealing procedures. The frictional behaviors of SiGe epilayers were subjected to nanoscratch techniques under a ramping load. Damage caused by scratching was examined by atomic force microscopy (AFM); the(More)
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