Shuzo Saeki

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  • Shuzo Saeki
  • 1975 IEEE Power Electronics Specialists…
  • 1975
Toshiba has developed two types of high power npvn transistors which have collector current ratings of 400A and collector-emitter voltage ratings of 300V. The first is a conventional one and the second is a monolithic Darlington-connected one. Both have the same 40mmφ pellet size. They are produced by triple diffusion techniques. The structures,(More)
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