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Journals and Conferences
The effects of sodium nitroprusside (SNP) on the multiplication, regeneration and rooting of Malus hupehensis Rehd. var. pinyiensis Jiang in tissue culture have been investigated. The results showed that the multiplication of plantlets was promoted significantly by applying 20 μM SNP to the Murashige and Skoog (MS) medium containing 2.0 μM… (More)
In this letter, we studied the forward bias gate breakdown mechanism on enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors. To the best of our knowledge, it is the first time that the temperature dependence of the forward gate breakdown has been characterized. We report for the first time on the observation of a positive temperature… (More)
The optimal charging schemes for Electric vehicles (EV) generally differ from each other in the choice of charging periods and the possibility of performing vehicle-to-grid (V2G), and have different impacts on EV economics. Regarding these variations, this paper presents a numerical comparison of four different charging schemes, namely night charging, night… (More)
In this paper a measurement methodology, using a two-dimensional electron gas (2DEG) resistor, is used to evaluate the dispersion of three different type of buffers, namely a step graded buffer, a buffer with low temperature (LT) AlN interlayers and a superlattice buffer. Together with a dedicated Design of Experiments (DOE), these measurements allowed us… (More)
The p-GaN gate HEMT device architecture is a prime contender for normally-off GaN power transistors. In this work the growth parameters of the Mg doped p-type GaN layer are varied and the impact of Mg out-diffusion and Mg activation on the main HEMT device parameters is studied. The Mg chemical concentration is optimized together with the Mg active… (More)
High-performance AlGaN/GaN diodes are realized on 8-in Si wafers with Au-free CMOS-compatible technology. The diodes are cointegrated on the same substrate together with the AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors and with only one extra lithographic step. The diode anode and the transistor gate are processed together and… (More)
An optimized collector doping profile for high-speed SiGe:C HBT devices is presented. A thin and abrupt collector pedestal is implemented in a f<inf>T</inf>/f<inf>MAX</inf> 245GHz/460GHz fully self-aligned HBT architecture.
In this paper, we have extensively investigated the impact of anode recess on the reverse leakage current, forward voltage (V<sub>F</sub>), and dynamic characteristics of Au-free AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET-SBDs) on 200-mm silicon substrates. By increasing the number of atomic layer etching (ALE) cycles for anode… (More)
A 2D TCAD based device architecture exploration of SiGe:C NPN HBTs is presented. Two novel and one conventional self-aligned architecture are explored by process and device simulation. All these three architectures show their capability of achieving maximum oscillation frequency (f<inf>max</inf>) of 500 GHz for scaled layout rules.
Summary form only given. Pulsed I-V measurements and TCAD simulations were used to study the effect of the source field-plate on the dynamic ON-resistance (R<sub>DS-ON</sub>) of AlGaN/GaN MIS-HEMTs. Several field-plate variations were studied: starting from a basic configuration with only a gate field-plate up to a configuration with one gate field-plate… (More)