Shuoting Yan

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The high photoconductivity of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) is responsible for the leakage current under illumination-particularly in projectors and displays with high-intensity backlight illumination. This work investigates a leakage current reduction approach, in which the inverted staggered a-Si:H TFTs are exposed to(More)
The hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) have been widely used as switching devices for large-area electronics, such as active matrix liquid crystal displayers. Effect of UV Illumination on improving device switching characteristics has been experimentally observed and studied. However, the inside mechanisms including state(More)
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