Shuojin Hang

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In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size He<sup>+</sup> ion beam. We then study the effects of the He<sup>+</sup> ion exposure on the carrier transport properties in a bilayer graphene nanoribbon (GNR) by varying the time of He ion bombardment, along(More)
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