Shunsuke Fukami

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Current-induced effective magnetic fields can provide efficient ways of electrically manipulating the magnetization of ultrathin magnetic heterostructures. Two effects, known as the Rashba spin orbit field and the spin Hall spin torque, have been reported to be responsible for the generation of the effective field. However, a quantitative understanding of(More)
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of the perpendicular magnetization by the SOT is achieved under an in-plane magnetic field collinear with an applied current. Typical structures studied so far comprise a nonmagnet/ferromagnet (NM/FM) bilayer,(More)
Recent advances in spintronics devices make it possible to open a new era of microelectronics. In this paper, we review the spintronics devices utilizing spin-transfer torques (STTs) and spin-orbit torques (SOTs) developed in recent years. The progresses of two-terminal STT device with CoFeB-MgO based magnetic tunnel junction (MTJ), three-terminal magnetic(More)
Polycrystalline metal oxides find diverse applications in areas such as nanoelectronics, photovoltaics and catalysis. Although grain boundary defects are ubiquitous their structure and electronic properties are very poorly understood since it is extremely challenging to probe the structure of buried interfaces directly. In this paper we combine novel(More)
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