Shuhji Toriyama

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We discuss random dopant effects in ultra-small MOSFETs associated with quantum confinement effects and contact resistances, along with the separation of impurity number fluctuations and position fluctuations. The contribution ratio of the effect of the channel impurity position fluctuation to the total threshold voltage fluctuation almost reaches 75%,(More)
Random-dopant-induced gate tunneling current fluctuations are studied for the first time. It is shown that gate leakage currents considerably fluctuate among MOSFETs even if there is no gate oxide thickness fluctuation. The physical origin of random-dopant-induced gate tunneling current fluctuations near the stand-by (V<inf>g</inf>&#8776; +0 V) is the(More)
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