Shubhendu Bhardwaj

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Application of the EKV3.0 model to 0.15mum CMOS technology with single poly, and buried channel PMOS, is presented with emphasis on scaling properties of the technology and the model. The EKV3.0 model is illustrated for its fit to NMOS and PMOS drain current, transconductances and output characteristics in weak, moderate and strong inversion over a large(More)
T Traditional circularly polarized (CP) horn antennas use a septum (or a partition) based feed, which is difficult to fabricate beyond 60 GHz. As an alternative, here we propose hexagonal waveguide based CP antenna design that is fabrication friendly and low-cost. Design, fabrication and characterization is shown for an F-band prototype. The prototype(More)
In this work, we propose a new method of gain and pattern characterization of circularly polarized (CP) antennas in the sub-mm-wave and terahertz band. Traditional methods can not be scaled in these bands due to waveguide ports and low margin for phase errors. The proposed method employs a phase-less and rotation-less measurement process using standard(More)
We present a thorough investigation of the optimum pumping configuration for L-band EDFA in order to maximize signal gain and minimize noise figure with forward and backward ASE pumping, by incorporating the selective property of the pump wavelength band from C-band EDFA section. A simulation of three-level rate equation has been carried out using 980 nm(More)
We demonstrate that plasma wave instability in a grated and RTD-gated high electron mobility transistor (HEMT) leads to terahertz emissions. Numerical calculations are provided using a new full wave Maxwell-hydrodynamic solver that incorporates a novel excitation term to account for RTD gate loading, necessary for amplification. Using the proposed solver,(More)
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