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Radiofrequency switches are critical components in wireless communication systems and consumer electronics. Emerging devices include switches based on microelectromechanical systems and phase-change materials. However, these devices suffer from disadvantages such as large physical dimensions and high actuation voltages. Here we propose and demonstrate a(More)
Planar memristive devices with bottom electrodes embedded into the substrates were integrated on top of CMOS substrates using nanoimprint lithography to implement hybrid circuits with a CMOL-like architecture. The planar geometry eliminated the mechanically and electrically weak parts, such as kinks in the top electrodes in a traditional crossbar structure,(More)
We used diluted hydrofluoric acid to shrink the feature size of a silicon dioxide nanoimprint mold to sub-10 nm regime. Using this mold, we have fabricated memristor crossbar arrays using nanoimprint lithography. We demonstrated that memristor devices with small junction areas exhibited bipolar non-volatile switching behavior with high ON/OFF ratio and low(More)
We present a simple and effective mold cleaning method for nanoimprint lithography. Polydimethylsiloxane (PDMS) prepolymer is spin-coated onto a contaminated imprint mold, thermally cured in an ambient environment, and then peeled off afterwards. Contaminants of 100 s μm to sub-50 nm sizes are effectively cleaned within one cycle. During the cleaning(More)
We present a simple and effective mold cleaning method for nanoimprint lithography. Polydimethylsiloxane (PDMS) prepolymer is spin-coated onto a contaminated imprint mold, thermally cured in ambient environment, and then peeled off afterwards. Contaminants of 100s m to sub-50 nm sizes are effectively cleaned within one cycle. During the cleaning process, a(More)
Our group focuses on developing better nanoscale memristor with improved performance, understanding the underlying device physics, and exploring new applications for this novel device. This paper introduces our recent work on memristor device engineering and CMOS integration. We have fabricated the smallest memristors (8 nm × 8 nm) in a crossbar(More)
Sub-10 nm metal nanowire arrays are important electrodes for building high density emerging 'beyond CMOS' devices. We made Pt nanowire arrays with sub-10 nm feature size using nanoimprint lithography on silicon substrates with 100 nm thick thermal oxide. We further studied the critical dimension (CD) evolution in the fabrication procedure and achieved 0.4(More)
In this paper, we introduce a novel application of memristor as a radiofrequency (RF) switch. We design and build a nanoscale memristor by placing gold and silver electrodes on silicon oxide with a 35 nm airgap in between. We program the device with a voltage as low as -0.4 V and achieve an ON/OFF conductance ratio of 1012. We test the RF performance of the(More)
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