Shoucong Ning

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Band gap engineering of monolayer transition metal dichalcogenides, such as MoS2 and WS2, is essential for the applications of the two-dimensional (2D) crystals in electronic and optoelectronic devices. Although it is known that chemical mixture can evidently change the band gaps of alloyed Mo(1-x)W(x)S2 crystals, the successful growth of Mo(1-x)W(x)S2(More)
The phase transition between semiconducting 1H to metallic 1T phases in monolayered transition metal dichalcogenides (TMDs) essentially involves three-dimensional (3D) structure changes of asymmetric relocations of S atoms at the top and bottom of the one-unit-cell crystals. Even though the phase transition has a profound influence on properties and(More)
Despite many theoretical predictions indicating exceptionally low energy barriers of ionic transport in phosphorene, the ionic transport pathways in this two-dimensional (2D) material has not been experimentally demonstrated. Here, using in situ aberration-corrected transmission electron microscopy (TEM) and density functional theory, we studied sodium ion(More)
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