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Band gap engineering of monolayer transition metal dichalcogenides, such as MoS2 and WS2, is essential for the applications of the two-dimensional (2D) crystals in electronic and optoelectronic devices. Although it is known that chemical mixture can evidently change the band gaps of alloyed Mo(1-x)W(x)S2 crystals, the successful growth of Mo(1-x)W(x)S2(More)
Despite many theoretical predictions indicating exceptionally low energy barriers of ionic transport in phosphorene, the ionic transport pathways in this two-dimensional (2D) material has not been experimentally demonstrated. Here, using in situ aberration-corrected transmission electron microscopy (TEM) and density functional theory, we studied sodium ion(More)
The phase transition between semiconducting 1H to metallic 1T phases in monolayered transition metal dichalcogenides (TMDs) essentially involves three-dimensional (3D) structure changes of asymmetric relocations of S atoms at the top and bottom of the one-unit-cell crystals. Even though the phase transition has a profound influence on properties and(More)
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