Shivender Saini

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(1999) Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron Abstract A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This has been achieved(More)
In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the(More)
A simple, rapid and sensitive constant wavelength synchronous fluorescence method is developed for the determination of danofloxacin (DAN) in pharmaceutical formulations and its residue in milk based on Al(III) enhanced fluorescence. The synchronous fluorescence intensity of the system is measured at 435 nm using ∆ λ = 80 nm and an excitation wavelength of(More)
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