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In this paper, a new class of layout dependent effects (LDE)—the time-dependent layout dependency due to device aging, is reported for the first time. The BTI and HCI degradation in nanoscale HKMG devices are experimentally found to be sensitive to layout configurations, even biased at the same stress condition. This new effect of layout dependent aging(More)
In this paper, the major physical effects caused by gate oxide traps in MOSFETs have been integrated for the first time by a proposed unified approach in realistic manners based on industry-standard EDA tools, aiming at practical trap-aware device/circuit co-design. The recently-found AC or transient effects of traps and the interplays with manufacturing(More)
Large-width and short-length MOS transistors with multi-finger layouts are necessary for the mixed-signal and RF IC designs to achieve optimum gain and noise performances. As the total width (i.e., the product of the finger width and the number of fingers Nfg) increases, the parasitic source and drain resistances due to the contact and diffusion regions(More)
for Robust Device/Circuit Co-Design Shaofeng Guo, Ru Huang, Peng Hao, Mulong Luo, Pengpeng Ren, Jianping Wang, Weihai Bu, Jingang Wu, Waisum Wong, Scott Yu, Hanming Wu, Shiuh-Wuu Lee, Runsheng Wang, Yangyuan Wang 1 Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China(More)
in Scaled High-κ/Metal-gate Technology for the nano-Reliability Era Pengpeng Ren, Runsheng Wang, Zhigang Ji, Peng Hao, Xiaobo Jiang, Shaofeng Guo, Mulong Luo, Meng Duan, Jian F. Zhang, Jianping Wang, Jinhua Liu, Weihai Bu, Jingang Wu, Waisum Wong, Shaofeng Yu, Hanming Wu, Shiuh-Wuu Lee, Nuo Xu, Ru Huang Institute of Microelectronics, Peking University,(More)
In this paper, the statistical characteristics of complex RTN (both DC and AC) are experimentally studied for the first time, rather than limited case-by-case studies. It is found that, over 50% of RTN-states predicted by conventional theory are lost in actual complex RTN statistics. Based on the mechanisms of non-negligible trap interactions, new models(More)
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