Shiuh-Wuu Lee

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for Robust Device/Circuit Co-Design Shaofeng Guo, Ru Huang, Peng Hao, Mulong Luo, Pengpeng Ren, Jianping Wang, Weihai Bu, Jingang Wu, Waisum Wong, Scott Yu, Hanming Wu, Shiuh-Wuu Lee, Runsheng Wang, Yangyuan Wang 1 Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China(More)
in Nanoscale CMOS Technology Runsheng Wang, Mulong Luo, Shaofeng Guo, Ru Huang*, Changze Liu, Jibin Zou, Jianping Wang, Jingang Wu, Nuo Xu, Waisum Wong Scott Yu, Hanming Wu, Shiuh-Wuu Lee, Yangyuan Wang Institute of Microelectronics, Peking University, Beijing 100871, China (*email: ruhuang@pku.edu.cn) Semiconductor Manufacturing International Corporation(More)
Device-Circuit-Layout Co-Optimization —New Findings on the Layout Dependent Aging Effects Pengpeng Ren, Xiaoqing Xu, Peng Hao, Junyao Wang, Runsheng Wang, Ming Li, Jianping Wang, Weihai Bu, Jingang Wu, Waisum Wong, Shaofeng Yu, Hanming Wu, Shiuh-Wuu Lee, David Z. Pan, Ru Huang Institute of Microelectronics, Peking University, Beijing 100871, China (emails:(More)
in Scaled High-κ/Metal-gate Technology for the nano-Reliability Era Pengpeng Ren, Runsheng Wang, Zhigang Ji, Peng Hao, Xiaobo Jiang, Shaofeng Guo, Mulong Luo, Meng Duan, Jian F. Zhang, Jianping Wang, Jinhua Liu, Weihai Bu, Jingang Wu, Waisum Wong, Shaofeng Yu, Hanming Wu, Shiuh-Wuu Lee, Nuo Xu, Ru Huang Institute of Microelectronics, Peking University,(More)
Large-width and short-length MOS transistors with multi-finger layouts are necessary for the mixed-signal and RF IC designs to achieve optimum gain and noise performances. As the total width (i.e., the product of the finger width and the number of fingers Nfg) increases, the parasitic source and drain resistances due to the contact and diffusion regions(More)
In this paper, the statistical characteristics of complex RTN (both DC and AC) are experimentally studied for the first time, rather than limited case-by-case studies. It is found that, over 50% of RTN-states predicted by conventional theory are lost in actual complex RTN statistics. Based on the mechanisms of non-negligible trap interactions, new models(More)
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