Shinya Kamo

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Self-aligned four-terminal (4T) planar metal double-gate (DG) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature (LT), which is below 550◦C, to realize high performance and low power dissipation system-onglass (SoG). The top gate (TG) and bottom gate (BG) were formed from tungsten (W);(More)
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