Shinji Matsukawa

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We clarified the mechanism of forward-biased electrostatic-discharge-induced degradation of InP-based laser diodes. This degradation was caused by melting of the active layer as a result of light absorption. We observed a reduction in tolerance on aging in uncoated laser diodes. This reduction was suppressed by facet coating.
This is the first report on electrostatic discharge (ESD)-induced degradation of AlGaInAs/InP buried heterostructure laser diodes. We found that the dominant degradation mechanism was melting of the active layer due to light absorption. We successfully improved ESD tolerance by facet passivation. The cumulative degradation ratio at 1.0kV ESD tests was(More)
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