Shinji Ishida

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Programmable devices such as SRAM-based FPGAs have the major challenges of power consumption and circuit area due to the excessive standby leakage current and the threshold voltage variation in highly scaled SRAM. Back-end-of-line (BEOL) device, which is integrated in the interconnect layers, is attractive for reducing the performance gap between FPGA and(More)
A novel polymer solid-electrolyte (PSE) switch, NanoBridge, featuring forming-free programming and an extremely high OFF/ON resistance ratio of 10<sup>5</sup> has been embedded in a 90nm-node CMOS by a fully logic-compatible process. Fast programming of 10nsec is also achieved in a 50nm&#x03C6; 1k-bit-cell array by introducing the PSE, enabling a short and(More)
Solid-electrolyte crossbar switch (namely NanoBridge) with low programming current of 420&#x00B5;A and highly reliable ON state against pulsed-alternating current (AC) stress is demonstrated under practical operating conditions of a programmable logic device (PLD). The ON-state duration under a pulsed-AC stress is achieved &#x003E;10 years at 150&#x00B0;C.(More)
Objective and Design: Ca2+ signaling is critical for mast cell activation by antigen stimulation, and we previously described that the signaling can be mimicked by Ca2+-ATPase inhibitors. We therefore investigated the effect of the Ca2+-ATPase inhibitor and antigen stimulation on the gene expression profiles of RBL-2H3 mast cells.¶Material: A Ca2+-ATPase(More)
A fully logic-compatible, nonvolatile crossbar switch using a novel dual-layer TiOx/TaSiOy solid-electrolyte, &#x201C;NanoBridge&#x201D;, has been developed for the first time, which is scalable to 50 nm and beyond and keeps the extremely low ON-resistance of &#x226A;100 &#x2126;. A key breakthrough is the dual-layer solid-electrolyte, in which TiOx works(More)
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