Shiming Zhang

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This paper explores the feasibility of combining calibrated AC 2-D numerical simulation and two of the latest Y-parameter-based noise models for predictive noise figure optimization in advanced UHV/CVD SiGe HBT's. At the operating current where the NE/sub min/ is the lowest, a close agreement between simulation using both noise models and measurement is(More)
We examine the geometrical scaling issues in SiGe HBT technology. Width scaling, length scaling, and stripe number scaling are quantified from an RF design perspective at 2 GHz. We conclude that a SiGe HBT with emitter area A/sub E/=0.5/spl times/20/spl times/6 /spl mu/m/sup 2/ is optimum for low noise applications at J/sub c/=0.1 mA//spl mu/m/sup 3/ and(More)
This paper presents a unified approach to optimizing SiGe transistors for low noise. An intuitive model relating transistor structural parameters and biases to noise parameters is introduced, and used to identify the noise limiting factors in a given transistor technology. Issues related to the calibration of 2-D device simulation are discussed. SiGe(More)
We present the first experimental results for new SiGe profile designs which were developed explicitly for improving minimum noise figure (NF/sub min/) without sacrificing gain, linearity, frequency response, or the stability of the SiGe strained layer. A measured NF/sub min/ of 0.2 dB at 2.0 GHz with an associated gain (G/sub assoc/) of 13 dB at noise(More)
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