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  • Shiho Kim
  • 2011 IEEE MTT-S International Microwave Workshop…
  • 2011
A power source combined with energy harvesting can provide wireless devices for low maintenance cost or extended battery life. We reviewed RF energy harvesting circuits for delivering power to wireless system operating at very low power levels with high efficiency. We need to apply low power control techniques to perform smart management for the wirelessly(More)
Namjun Cho, Seong-Jun Song, Jae-Youl Lee, Sunyoung Kim, Shiho Kim, and Hoi-Jun Yoo s Dept. of EE & CS, Korea Advanced Institute of Science and Technology(KAIST) 371 – 1, Guseong-dong, Yuseong-gu, Daejeon, 305-701, Republic of Korea * Dept. of EE, Wonkwang University, Iksan, 570-749, Republic of Korea E-mail: buzm@eeinfo.kaist.ac.kr . . Abstract— We present(More)
This paper proposes a planning method based on forward path generation and backward tracking algorithm for Automatic Parking Systems, especially suitable for backward parking situations. The algorithm is based on the steering property that backward moving trajectory coincides with the forward moving trajectory for the identical steering angle. The basic(More)
We propose a steering control method for an autonomous vehicle by controlling the steering rate instead of the steering angle and describe a method for extracting the steering rate from the reference path using the relationship with curvature and slip angle. The proposed steering control method can be used not only for planning steering control input from(More)
A digital coreless maximum power point tracking (MPPT) circuit for thermoelectric generator unit is proposed and fabricated. The experimental and simulation results from the proposed MPPT circuit dealt with rapid variation of temperature and abrupt changes of load current have shown that the proposed method allows stable operation with high power transfer(More)
An analog front-end circuit for 13.56MHz RFID interrogators compatible with ISO14443, ISO15693 and ISO18000-3 Mode 1 RFID interrogators was designed and fabricated by using 0.35μm double poly CMOS process. The fabricated chip was operated at 3.3 volt single supply. The results of this work can be provided as reusable IPs in a form of hard or firm IPs for(More)