Shih-Chun Tsai

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For advance node such as 14nm technology and beyond, back end of line interconnect has implemented self-aligned via (SAV) schemes for better via-metal short process window [1]. A TiN metal hard mask (MHM) is used for the trench pattern definition, after which via lithography and partial via (PV) etch is performed where the TiN was opened. The via etch(More)
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