Shiang-Yu Chen

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Effects of drift-region design on the hot-carrier reliability of n-channel integrated high-voltage lateral diffused MOS (LDMOS) transistors are investigated. LDMOS devices with various dosages of n-type drain drift (NDD) implant and various drift-region lengths (L<sub>d</sub>) are studied. Results show that higher NDD dosage can reduce hot-carrier induced(More)
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