Shengkai Wang

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In this paper, MOS capacitors and Mg-implanted source and drain p-channel GaSb MOSFETs are fabricated. The effects of post-metallization annealing (PMA) on the performance of these devices have been studied. The 30sec 300 &#x00B0;C PMA in N<sub>2</sub> ambient is found to improve the quality of the Al<sub>2</sub>O<sub>3</sub>/n-GaSb interface. After PMA,(More)
A combined wafer bonding method consist of spot pressing bonding technique and water glass adhesive layer is proposed. The mechanism of water glass bonding is investigated, and the two major factors in this bonding method: surface energy and voids formation has also been discussed.
In this work, high reflectivity backside reflectors combining TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> distributed Bragg reflector (DBR) by atomic layer deposition (ALD) with metallic mirror have been demonstrated for the first time. Multi-pair-DBRs/Al and multi-pair-DBRs/Ag stacks with excellent uniformity and thickness accuracy have exhibited high(More)
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