Sheng-Wen Chen

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An integrated circuit of radio-frequency power detection by a 0.18ĭm CMOS process with the output voltage linearly proportional to the input power in decibel is presented. The target dynamic range of this radio-frequency power detector design is 40 dB with the log-error being within ±1dB. Whatever the point of view is on dynamic range or(More)
An integrated circuit of quad-band GSM single pole six thru (SP6T) switch is designed with an InGaAs/GaAs PHEMT technology. It had successfully demonstrated as play for all quad-band operations (GSM850, EGSM900, DCS1800, PCS1900). Both requirements of low insertion loss (less than 1 dB) and high isolation are achieved at the same time. Some of termination(More)
From the end of 2007, the open-source characteristic of Android platform has been the most competitive one in the smart phone market. According to recent statistics from Gartner, Android¡¦s market share in February 2010 is 3.9%, rises to 17.2% in August in the same year, and reaches 22.7% in February 2011, which only falls(More)
In this paper, a design for high dynamic range applicable of power detector by using successive detection logarithmic amplifier (SDLA) configuration consists of PMOS load limiting amplifier and unbalanced source-coupled pairs. This device was been fabricated by TSMC 0.18-µm 1P6M CMOS process. The experimental results show that the dynamic range of(More)
A quad-band GSM/GPRS power amplifier module is designed with a built-in ability of RF power transmitting control. Within the RF power transmitting control loop, a RF power detecting circuit with another reference circuit are embedded together onto the same InGaP/GaAs HBT power amplifier chip to achieve a good temperature compensation. Such power chips are(More)
  • Hui-Feng Lin, Chun-Te Wu, +4 authors Jyh-Shin Chen
  • IEEE Transactions on Ultrasonics, Ferroelectrics…
  • 2005
Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300/spl deg/C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and(More)
Amorphous nitrogen-doped silicon carbide (α-SiCN:H) films have been used as a Cu penetration diffusion barrier and interconnect etch stop layer in the below 90-nanometer ultra-large scale integration (ULSI) manufacturing technology. In this study, the etching stop layers were deposited by using trimethylsilane (3MS) or tetramethylsilane (4MS) with ammonia(More)
This paper presents different design concepts and approaches of CMOS broadband amplifiers for optical communications and optical interconnects. The design techniques of distributed amplifier (DA), capacitive peaking, and inductor/transformer peaking are reviewed. Using the proposed inductive peaking techniques, we have demonstrated previously a 40-Gb/s(More)
The enantiomers of napropamide were separated by normal phase HPLC (HPLC: high performance liquid Chromatography) with Chiralpak OJ-H column and charactered by circular dichroism. On this basis, a method for the chiral separation and micro-determination of napropamide in water was established. The linearity of calibration curve for racemic mixture was(More)
Enantioselective Degradation of 2,4-Dichlorprop methyl ester was studied by sediment bacteria. One DCPPM-degrading bacteria stain was isolated from contaminated sediments. The EF values were determined by chiral GC. The enantioselectivity of DCPPM biodegradation in aquatic phases were evaluated. Incubation with DCPPM-degrading bacteria show that the R(More)