Sheila Mayumi Okano

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OBJECTIVE This study was performed to investigate the temperature rises on root surfaces and morphological changes on root canal walls of extracted human teeth after irradiation by erbium, chromium: yttrium, scandium, gallium, garnet (Er, Cr:YSGG) laser and to evaluate the efficiency in removing smear layer and debris from the prepared root canal walls in(More)
We tried to evaluate and predict the RC delay variability beyond the 45 nm copper interconnects technologies. The RC delay variability as a normalized delay time distribution, is caused by the line width/height variations due to the manufacturing process fluctuations. In order to evaluate the influence of the resistivity size effect precisely, we improved(More)
A 12-GHz low-noise amplifier (LNA), a 1-GHz IF amplifier (IFA), and an 11-GHz dielectric resonator oscillator (DRO) have been developed for DBS home receiver applications by using GaAs monolithic microwave integrated circuit (MMIC) technology. Each MMIC chip contains FETs as active elements and self-biasing source resistors and bypass capacitors for a(More)
S- and X-band passive MIC diode limiters have been developed for high power applications. Two PIN diodes with I layer thickness of 9.5mu m and 1.5mu m are shunt-mounted to 50 ohm microstrip lines. The limiters can handle 2-kW peak input power with less than 100mW peak leakage power for pulsed RF signals of 1mu s width and 0.1 percent duty ratio.
High performance GaAs MESFETs have been fabricated on epitaxial layers grown by MO-CVD (metal-organic chemical vapor deposition). At 8 GHz, a NF (noise figure) of 1.8 dB with an associated gain of 11 dB has been obtained for Al-gate MESFETs with gate dimensions of 0.5 × 300 µm. The NF at 8 GHz is lower by 1 dB than the previously reported results(More)
According to the 45 nm BEOL technology node, we demonstrated that a homogeneous interlayer dielectric with dielectric constant of 2.25 has a substantial advantage in terms of RC delay reduction compared to other potential architectures such as hybrid and tri-level dielectrics. Combination of the homogeneous interlayer dielectric and ultra-thinned barrier(More)
We successfully encapsulated Cu wiring with an ultra-thin self-forming barrier consisting of MnO and a bi-layer of MnO/Ta. TDDB test showed that the ILDs lifetime increased by a factor of 100 over that of our control sample. The encapsulated Cu wiring increased EM lifetime by a factor of more than 47. For via chains that are vulnerable to thermal stress,(More)
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