Sheeja Krishnan

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We utilize a combination of MOSFET gate-controlled diode DC-IV measurements and a very sensitive electron spin resonance technique called spin-dependent recombination to observe and identify defect centers generated by NBTI in fully processed SiO<sub>2</sub>-based pMOSFETs. In SiO<sub>2</sub> devices, the defects include two Si/ SiO <sub>2</sub> interface(More)
The atomic scale defect physics responsible for the negative bias temperature instability (NBTI) phenomenon are not well understood. In this study, we use a highly sensitive form of electron spin resonance (ESR) called spin dependent recombination (SDR) to investigate the chemical and physical nature of the defects responsible for NBTI. We show that P/sub(More)
We utilize a combination of DC-IV measurements as well as two very sensitive electrically detected magnetic resonance measurements, spin-dependent recombination and spin dependent tunneling, to identify the atomic-scale defects involved in the negative bias temperature instability (NBTI) in 2.3 nm plasma- nitrided SiO<sub>2</sub>-based pMOSFETs. Our(More)
The charge transport properties of CdTe/CdS solar cells deposited by radio frequency (RF) sputtering have been investigated and presented in this article. The temperature dependent current-voltage characteristics of the devices under dark condition were carried out in the temperature range 240-340 K. The capacitance of the devices at various frequencies was(More)
It has been shown that the negative bias temperature instability (NBTI) may be significantly suppressed through the incorporation of fluorine in the gate oxide. In this study, we use the electrically-detected magnetic resonance technique of spin dependent recombination and standard gated diode current measurements to investigate the atomic-scale processes(More)
We demonstrate voltage controlled spin dependent tunneling in 1.2nm effective oxide thickness silicon oxynitride films. Our observations introduce a simple method to link point defect structure and energy levels in a very direct way in materials of great technological importance. We obtain defect energy level resolution by exploiting the enormous difference(More)
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