Sorry, we do not have enough data to show an influence graph for this author.
- Full text PDF available (0)
Journals and Conferences
A new circuit simulation model is presented for impact ionization generated MOSFET substrate current. The model uses four parameters to accurately model substrate current over a wide range of device dimensions and operating voltages, including operation in the linear region. The model is able to model substrate currents from both heavily doped and lightly… (More)