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Journals and Conferences
Single drain select transistor (DSL) in 3D Flash memory may exhibit higher leakage as compared with DSL in 2D NAND, because of worse subthreshold swing characteristics due to poly-Si channel. Select… (More)
A comprehensive simulation analysis method is proposed to improve the bottom select gate (BSG) transistor's Vth distribution by adopting under-channel implant in this work.
The impact of polysilicon thickness (THK-poly) and channel hole diameter (CHCD) on channel boosting potential during program inhibit has been studied with Sentaurus device simulator for three… (More)