Shanggong Feng

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In this paper several sub-cell and unit-cell power heterojunction bipolar transistor were fabricated and the impact of device dimension and structure on the device characteristic of sub-cell and unit-cell power HBT Transisotor is analyzed and discussed. It was found that: for the sub-cell HBT with different dimension a larger emitter size means smaller RF(More)
In this paper the photocurrent properties of the CdS/CdTe thin film solar cell were modeled by using relative physical models that were the incoherence model of the optical generation, the continuity equation for carriers and the current density equation. Then the effect of CdS and CdTe thickness on the photo current was simulated. The results of the(More)
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