Shakila Reyaz

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This paper presents mm-wave capacitive RF-MEMS based Single-Pole-Double-Throw (SPDT) switches fabricated in a SiGe BiCMOS process technology. Three different SiGe RF-MEMS based SPDTs (targeting the 40-80 GHz range) present 3-4 dB of in-band losses and up to 20-25 dB of isolation, respectively. The measured in-band attenuation of the characterized SiGe MEMS(More)
We present two wideband reconfigurable LNA hybrid circuits realized using ohmic contact and capacitive RF-MEMS SPDT switch networks made on GaAs and quartz substrates, respectively. The wideband GaAs MEMS SPDT switch circuit used presents a loss of less than 1.0 dB and isolation higher than 15 dB from DC up to 34 GHz and the capacitive MEMS SPDT switch(More)
This paper presents two SiGe power detector circuit designs intended for W-band passive imaging systems. The power detectors were designed in a 130 nm SiGe BiCMOS technology with f<sub>T</sub>/f<sub>max</sub> of 300 GHz/500 GHz. The initial detector design exhibits a measured peak responsivity of 80 kV/W and an estimated Noise Equivalent Power (NEP) of 0.4(More)
This paper presents a novel compact circuit design of an RF-MEMS frequency-agile LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The uncapped/BCB capped single-chip GaAs MEMS tunable LNA circuits which can be matched at different frequency bands (e.g at X-band and Ku-/K-band) present similar in-band gain,(More)
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