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Journals and Conferences
InGaAsSb and GaSb thermophotovoltaic cells were grown lattice-matched to GaSb substrates epitaxially by the Molecular Beam Epitaxy (MBE) method and fabricated non-epitaxially using ion-implantation. TPV cells with 1 × 1 cm dimensions were fabricated. External quantum efficiencies and device characteristics including open circuit voltage, short… (More)
An optimization it done on the fill factor of an M BE-grown p-on-n GaSb photovoltaic by reducing the series resistance brought on by the layout of the front metal electrodes while simultaneously minimizing their coverage area. The optimization indicates a variation in the substrate carrier lifetime.