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In depletion-all around (DAA) operation of SOI four-gate transistor (G<sup>4</sup>-FET), the conducting channel can be surrounded by depletion regions induced by independent vertical MOS gates and lateral JFET gates. This enables majority carriers to flow through the volume of the silicon film far from both silicon/oxide and p+ gate/n-channel interfaces. A… (More)
The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ∼830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.
Variations of count rate with orientation of the detector were investigated. Scaled difference images (SDI) were generated from pairs of arrays acquired at different detector orientations. The hypothesis tested was that any variations could be totally explained by random disintegration noise. We accepted or rejected this hypothesis according to the… (More)
Ga(In)N nanowires and Ga(In)N quantum disks can be grown defect-free on silicon with p- and n-doping to form diodes. We will describe the characteristics of light-emitting diodes and electrically injected single nanowire single photon sources.
The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced… (More)