Learn More
We have studied the dependence of Au-assisted InAs nanowire (NW) growth on InAs(111)B substrates as a function of substrate temperature and input V/III precursor ratio using organometallic vapor-phase epitaxy. Temperature-dependent growth was observed within certain temperature windows that are highly dependent on input V/III ratios. This dependence was(More)
We report direct observation of an unexpected anisotropic swelling of Si nanowires during lithiation against either a solid electrolyte with a lithium counter-electrode or a liquid electrolyte with a LiCoO(2) counter-electrode. Such anisotropic expansion is attributed to the interfacial processes of accommodating large volumetric strains at the lithiation(More)
Single-crystal InAs nanowires (NWs) are synthesized using metal-organic chemical vapor deposition (MOCVD) and fabricated into NW field-effect transistors (NWFETs) on a SiO(2)/n(+)-Si substrate with a global n(+)-Si back-gate and sputtered SiO(x)/Au underlap top-gate. For top-gate NWFETs, we have developed a model that allows accurate estimation of(More)
In lithium-ion batteries, the electrochemical reaction between the electrodes and lithium is a critical process that controls the capacity, cyclability and reliability of the battery. Despite intensive study, the atomistic mechanism of the electrochemical reactions occurring in these solid-state electrodes remains unclear. Here, we show that in situ(More)
We demonstrate the ability to precisely control the alignment and placement of large numbers of InAs nanowires from solution onto very narrow, prepatterned electrodes using dielectrophoresis. An understanding of dielectrophoretic behavior associated with such electrode geometries is essential to development of approaches for assembly of intricate nanowire(More)
The capacitive effects of interface trap states in top-gated InAs nanowire field effect transistors and their influence on the experimental extraction of transport parameters are discussed. Time resolved transfer characteristics exhibit transient behavior indicating surface state trapping and detrapping with long characteristic time constants of 45 s.(More)
We have studied the nucleation and growth of InAs nanowires (NWs) on SiO 2 /Si substrates by organometallic vapor-phase epitaxy (OMVPE). Through systematic characterization of InAs NW morphology as a function of V/III precursor ratio, precursor flow rates, growth temperature, growth time, and the presence/absence of Au nanoparticles, a number of significant(More)
It is shown that interface trap states have pronounced effects on carrier transport and parameter extraction from top-gated InAs nanowire field effect transistors ͑NWFETs͒. Due to slow surface state charging and discharging, the NWFET characteristics are time dependent with time constants as long as ϳ45 s. This is also manifested in a time-dependent(More)
We report new fundamental insights into InAs nanowire (NW) nucleation and evolution on InAs (111)B surfaces using organometallic vapor phase epitaxy and present the first experimental demonstration of two distinct NW growth regimes, defined by the direction of substrate-NW adatom exchange, that lead to nonlinear growth rates. We show that the NW elongation(More)