Seung Cheol Han

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The electrical properties of Ni-based ohmic contacts to N-face p-type GaN were investigated. The specific contact resistance of N-face p-GaN exhibits a linear decrease from 1.01 omega cm2 to 9.05 x 10(-3) omega cm2 for the as-deposited and the annealed Ni/Au contacts, respectively, with increasing annealing temperature. However, the specific contact(More)
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