Seulki Park

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In this paper, we measured four-level Random Telegraph Noise (RTN) in Gate Induced Drain Leakage (GIDL) current of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Using RTN measurement data, we extracted fundamental parameters of each trap, such as the trap depth (x<sub>T</sub>) and energy level (E<sub>Cox</sub>-E<sub>T</sub>). To correctly(More)
A variation-immune symmetric tunnel field-effect transistor (S-TFET) is proposed for the first time to implement bidirectional current flows (I<sub>ON</sub> = 3.6 &#x03BC;A/&#x03BC;m, IOFF = 23 pA/&#x03BC;m at VDD = 0.5 V) with the steep-switching feature of a subthreshold slope (SS) &lt;; 60 mV/dec (SS = 47 mV/dec) and to alleviate the impact of random(More)
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